 | | ||
| PartNumber | PMPB47XP,115 | PMPB47XP | PMPB47XP115 |
| Description | MOSFET PMPB47XP/SOT1220/REEL 7" Q1/T1 | Now Nexperia PMPB47XP - Power Field-Effect Transistor, 4A I(D), 30V, 0.058ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT1220 | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-2020MD-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 47 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 21 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 12.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Nexperia | - | - |
| Forward Transconductance Min | 20 S | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 33 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Nexperia |
PMPB47XP,115 | MOSFET PMPB47XP/SOT1220/REEL 7" Q1/T1 | |
| PMPB47XP,115 | MOSFET P-CH 30V 4A 6DFN | ||
| PMPB47XP | Жаңа және түпнұсқа | ||
| PMPB47XP115 | Now Nexperia PMPB47XP - Power Field-Effect Transistor, 4A I(D), 30V, 0.058ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT1220 |