PMD16

PMD16K100 vs PMD1600K vs PMD1602K

 
PartNumberPMD16K100PMD1600KPMD1602K
DescriptionBipolar Transistors - BJT 60Vcbo 80Vceo 5.0 20A 40A 500mA 200W
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3-2--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage2 V--
Maximum DC Collector Current40 A--
Gain Bandwidth Product fT4 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
SeriesPMD16K100--
DC Current Gain hFE Max20000--
PackagingTube--
BrandCentral Semiconductor--
Continuous Collector Current20 A--
DC Collector/Base Gain hfe Min1000--
Pd Power Dissipation200 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity20--
SubcategoryTransistors--
Part # AliasesPBFREE PMD16K100--
Өндіруші Бөлім № Сипаттама RFQ
Central Semiconductor
Central Semiconductor
PMD16K100 Bipolar Transistors - BJT 60Vcbo 80Vceo 5.0 20A 40A 500mA 200W
PMD1600K Жаңа және түпнұсқа
PMD1602K Жаңа және түпнұсқа
PMD16K100 Trans Darlington NPN 100V 20A 2-Pin TO-3 Sleeve - Rail/Tube (Alt: PMD16K100)
PMD16K80 BJT, NPN, 100V, TO-3, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:80V, Transition Frequency ft:-, Power Dissipation Pd:225W, DC Collector Current:20A, DC Current Gain hFE:1000hFE
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