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| PartNumber | PHB66NQ03LT,118 | PHB66NQ03LT | PHB66NQ03LT118 |
| Description | MOSFET TAPE13 MOSFET | Now Nexperia PHB66NQ03LT Power Field-Effect Transistor, 66A I(D), 25V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | |
| Manufacturer | Nexperia | PHILIPS | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 66 A | - | - |
| Rds On Drain Source Resistance | 10.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 93 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.5 mm | - | - |
| Length | 10.3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.4 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 90 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | /T3 PHB66NQ03LT | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Nexperia |
PHB66NQ03LT,118 | MOSFET TAPE13 MOSFET | |
| PHB66NQ03LT,118 | RF Bipolar Transistors MOSFET TAPE13 MOSFET | ||
| PHB66NQ03LT | Жаңа және түпнұсқа | ||
| PHB66NQ03LT118 | Now Nexperia PHB66NQ03LT Power Field-Effect Transistor, 66A I(D), 25V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK |