| PartNumber | PBSS5230T,215 | PBSS5230QAZ | PBSS5230PAP,115 |
| Description | Bipolar Transistors - BJT TRANS BISS TAPE-7 | Bipolar Transistors - BJT 30 V, 2A PNP low VCE sat (BISS) transi | Bipolar Transistors - BJT 30V 2A PNP/PNP lo VCEsat transistor |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-236AB-3 | DFN-1010D-3 | DFN-2020-6 |
| Transistor Polarity | PNP | - | PNP |
| Configuration | Single | - | Dual |
| Collector Emitter Voltage VCEO Max | 30 V | - | - 30 V |
| Collector Base Voltage VCBO | 30 V | - | - 30 V |
| Emitter Base Voltage VEBO | 5 V | - | - 7 V |
| Maximum DC Collector Current | 2 A | - | - 3 A |
| Gain Bandwidth Product fT | 200 MHz | - | 95 MHz |
| Minimum Operating Temperature | - 65 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Height | 1 mm | - | - |
| Length | 3 mm | - | - |
| Packaging | Reel | Reel | Reel |
| Width | 1.4 mm | - | - |
| Brand | Nexperia | Nexperia | Nexperia |
| Pd Power Dissipation | 480 mW | - | 1450 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 5000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | PBSS5230T T/R | - | - |
| Unit Weight | 0.000265 oz | - | - |
| Collector Emitter Saturation Voltage | - | - | - 75 mV |
| DC Current Gain hFE Max | - | - | 370 |
| Continuous Collector Current | - | - | - 2 A |
| DC Collector/Base Gain hfe Min | - | - | 260 |