| PartNumber | NVMFS6H800NT1G | NVMFS6H801NT1G | NVMFS6H800NWFT1G |
| Description | MOSFET TRENCH 8 80V NFET | MOSFET TRENCH 8 80V NFET | MOSFET TRENCH 8 80V NFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8FL | SO-8FL | SO-8FL |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | 80 V |
| Id Continuous Drain Current | 203 A | 157 A | 203 A |
| Rds On Drain Source Resistance | 2.1 mOhms | 2.8 mOhms | 2.1 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 85 nC | 64 nC | 85 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 200 W | 166 W | 200 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 138 S | 128 S | 138 S |
| Fall Time | 85 ns | 19 ns | 85 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 89 ns | 74 ns | 89 ns |
| Factory Pack Quantity | 1500 | 1500 | 1500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 97 ns | 70 ns | 97 ns |
| Typical Turn On Delay Time | 25 ns | 25 ns | 25 ns |