 | |  | |
| PartNumber | NVB5860N | NVB5860NL | NVB5860NLT4G |
| Description | MOSFET N-CH 60V 169A D2PAK | ||
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| Series | NVB5860NL | NVB5860NL | NVB5860NL |
| Packaging | Reel | Reel | Reel |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Technology | Si | Si | Si |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Configuration | Single Dual Drain | Single Dual Drain | Single Dual Drain |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | 283 W | 283 W | 283 W |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Id Continuous Drain Current | 220 A | 220 A | 220 A |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Rds On Drain Source Resistance | 2.8 mOhms | 2.8 mOhms | 2.8 mOhms |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Typical Turn Off Delay Time | 98 ns | 98 ns | 98 ns |
| Typical Turn On Delay Time | 25 ns | 25 ns | 25 ns |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| NVB5860N | Жаңа және түпнұсқа | ||
| NVB5860NL | Жаңа және түпнұсқа | ||
ON Semiconductor |
NVB5860NLT4G | MOSFET N-CH 60V 169A D2PAK | |
| NVB5860NT4G | RF Bipolar Transistors MOSFET NFET D2PAK 60V 169A 3MOHM |