| PartNumber | NVATS4A102PZT4G | NVATS4A103PZT4G | NVATS4A101PZT4G |
| Description | MOSFET Power MOSFET P-Channel -30 V | MOSFET Power MOSFET P-Channel -30 V | MOSFET Power MOSFET P-Chann -30 V |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 44 A | 60 A | 27 A |
| Rds On Drain Source Resistance | 14 mOhms | 10 mOhms | 23 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.6 V | 2.6 V | 2.6 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 34 nC | 47 nC | 18.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 48 W | 60 W | 36 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 29 S | 45 S | 17 S |
| Fall Time | 185 ns | 145 ns | 70 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 135 ns | 400 ns | 70 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 135 ns | 150 ns | 80 ns |
| Typical Turn On Delay Time | 11 ns | 19 ns | 9.2 ns |
| Unit Weight | 0.011993 oz | 0.011993 oz | 0.011993 oz |