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| PartNumber | NTZD3152PT1G | NTZD3152PT1 | NTZD3152PT1G-CUT TAPE |
| Description | MOSFET -20V -430mA Dual P-Channel | ||
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-563-6 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 430 mA | - | - |
| Rds On Drain Source Resistance | 2 Ohms, 2 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 1.8 V | - | - |
| Qg Gate Charge | 1.7 nC, 1.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 280 mW | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTZD3152P | NTZD3152P | - |
| Transistor Type | 2 P-Channel | 2 P-Channel | - |
| Width | 1.2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 1 S, 1 S | - | - |
| Fall Time | 19 ns, 19 ns | 12 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns, 12 ns | 12 ns | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns, 35 ns | 35 ns | - |
| Typical Turn On Delay Time | 10 ns, 10 ns | 10 ns | - |
| Unit Weight | 0.000106 oz | 0.000289 oz | - |
| Package Case | - | SOT-563, SOT-666 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-563 | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 250mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 175pF @ 16V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 430mA | - |
| Rds On Max Id Vgs | - | 900 mOhm @ 430mA, 4.5V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 2.5nC @ 4.5V | - |
| Pd Power Dissipation | - | 250 mW | - |
| Vgs Gate Source Voltage | - | 6 V | - |
| Id Continuous Drain Current | - | - 430 mA | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Rds On Drain Source Resistance | - | 1 Ohms | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| NTZD3152PT1G | MOSFET -20V -430mA Dual P-Channel | ||
| NTZD3152PT1H | MOSFET PFET SOT563 20V 430MA TR | ||
| NTZD3152PT1 | Жаңа және түпнұсқа | ||
| NTZD3152PT1G-CUT TAPE | Жаңа және түпнұсқа | ||
ON Semiconductor |
NTZD3152PT1G | MOSFET 2P-CH 20V 0.43A SOT-563 | |
| NTZD3152PT1H | MOSFET 2P-CH 20V 0.43A SOT563 | ||
| NTZD3152PT5G | MOSFET 2P-CH 20V 0.43A SOT-563 |