 |  |  | |
| PartNumber | NTP5860NG | NTP5860N | NTP5860NLG |
| Description | MOSFET NFET TO220 60V 2.5A 300 | IGBT Transistors MOSFET | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 98 A | - | - |
| Rds On Drain Source Resistance | 3 mOhms | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 283 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | Tube | Bulk |
| Series | NTP5860N | NTP5860N | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ON Semiconductor | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Package Case | - | TO-220-3 | TO-220-3 |
| Pd Power Dissipation | - | 283 W | 283 W |
| Id Continuous Drain Current | - | 98 A | 98 A |
| Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
| Rds On Drain Source Resistance | - | 3 mOhms | 3 mOhms |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| NTP5860NG | MOSFET NFET TO220 60V 2.5A 300 | ||
| NTP5860N | Жаңа және түпнұсқа | ||
ON Semiconductor |
NTP5860NG | Darlington Transistors MOSFET NFET TO220 60V 2.5A 300 | |
| NTP5860NLG | IGBT Transistors MOSFET |