 | |  | |
| PartNumber | NTMFS4847NAT3G | NTMFS4847NT1G | NTMFS4847NAT1G |
| Description | MOSFET 30V N-CH TRENCH 2.6 S0-8FL | MOSFET NFET SO8FL 30V TR | MOSFET N-CH 30V 11.5A SO-8FL |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-FL-8 | SO-FL-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 85 A | 29.5 A | - |
| Rds On Drain Source Resistance | 4.1 mOhms | 4.1 mOhms | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Reel | - |
| Series | NTMFS4847N | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 5000 | 1500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | - | 16 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 5.8 W | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 1.05 mm | - |
| Length | - | 4.9 mm | - |
| Width | - | 5.8 mm | - |
| Fall Time | - | 8.7 ns | - |
| Rise Time | - | 53 ns | - |
| Typical Turn Off Delay Time | - | 21 ns | - |
| Typical Turn On Delay Time | - | 17.7 ns | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| NTMFS4847NAT3G | MOSFET 30V N-CH TRENCH 2.6 S0-8FL | ||
ON Semiconductor |
NTMFS4847NT1G | MOSFET NFET SO8FL 30V TR | |
| NTMFS4847NT3G | MOSFET NFET SO8FL 30V TR | ||
| NTMFS4847NAT1G | MOSFET N-CH 30V 11.5A SO-8FL | ||
| NTMFS4847NT1G | MOSFET N-CH 30V 11.5A SO-8FL | ||
| NTMFS4847NT3G | MOSFET N-CH 30V 11.5A SO-8FL | ||
| NTMFS4847NAT3G | RF Bipolar Transistors MOSFET 30V N-CH TRENCH 2.6 S0-8FL |