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| PartNumber | NTD4806NT1G | NTD4806NT4G | NTD4806NT4G 4806NG |
| Description | MOSFET N-CH 30V 11.3A DPAK | ||
| Manufacturer | - | ON | - |
| Product Category | - | FETs - Single | - |
| Series | - | NTD4806N | - |
| Packaging | - | Reel | - |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | TO-252-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 2.14 W | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 7.8 ns 4.7 ns | - |
| Rise Time | - | 29.7 ns 23.8 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 14 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 6 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 18.3 ns 26 ns | - |
| Typical Turn On Delay Time | - | 13.9 ns 8.5 ns | - |
| Forward Transconductance Min | - | 14 S | - |
| Channel Mode | - | Enhancement | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| NTD4806NT1G | Жаңа және түпнұсқа | ||
| NTD4806NT4G 4806NG | Жаңа және түпнұсқа | ||
| NTD4806NT4GDPAK | Жаңа және түпнұсқа | ||
ON Semiconductor |
NTD4806NT4G | MOSFET N-CH 30V 11.3A DPAK |