![]() | ![]() | ||
| PartNumber | NJVMJD42CRLG | NJVMJD42CT4G | NJVMJD42CT4 |
| Description | Bipolar Transistors - BJT BIP DPAK PNP 6A 100V TR | Bipolar Transistors - BJT SILICON Pwr TRANSISTOR | Trans GP BJT PNP 100V 6A Automotive 3-Pin(2+Tab) DPAK T/R |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | Y | - |
| Series | MJD42C | MJD42C | MJD42C |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 1800 | 2500 | - |
| Subcategory | Transistors | Transistors | - |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | DPAK-3 | - |
| Transistor Polarity | - | PNP | PNP |
| Configuration | - | Single | Single |
| Collector Emitter Voltage VCEO Max | - | 100 V | - |
| Collector Base Voltage VCBO | - | 100 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| Maximum DC Collector Current | - | 6 A | 6 A |
| Gain Bandwidth Product fT | - | 3 MHz | 3 MHz |
| Minimum Operating Temperature | - | - 65 C | - 65 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| DC Current Gain hFE Max | - | 30 at 300 mA, 4 V | 30 at 0.3 A at 4 V |
| Height | - | 2.38 mm | - |
| Length | - | 6.73 mm | - |
| Width | - | 6.22 mm | - |
| DC Collector/Base Gain hfe Min | - | 30 | - |
| Pd Power Dissipation | - | 1750 mW | - |
| Part # Aliases | - | NJVMJD42CT4G-VF01 | - |
| Unit Weight | - | 0.012346 oz | 0.012346 oz |
| Package Case | - | - | DPAK-3 |
| Pd Power Dissipation | - | - | 1750 mW |
| Collector Emitter Voltage VCEO Max | - | - | 100 V |
| Collector Base Voltage VCBO | - | - | 100 V |
| Emitter Base Voltage VEBO | - | - | 5 V |
| DC Collector Base Gain hfe Min | - | - | 30 |