 |  |  | |
| PartNumber | NJVMJD32CG | NJVMJD32CT4G | NJVMJD32CT4G/MJD31C |
| Description | Bipolar Transistors - BJT BIP DPAK PNP 3A 100V | Darlington Transistors BIP DPAK PNP 3A 100V TR | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Darlington Transistors | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DPAK-3 | DPAK | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | - 100 V | 100 V | - |
| Collector Base Voltage VCBO | - 100 V | 100 V | - |
| Emitter Base Voltage VEBO | - 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 1.2 V | - | - |
| Maximum DC Collector Current | 5 A | - | - |
| Gain Bandwidth Product fT | 3 MHz | 3 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | MJD32C | MJD32C | - |
| Packaging | Tube | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 3 A | 3 A | - |
| Pd Power Dissipation | 15 W | 15 W | - |
| Product Type | BJTs - Bipolar Transistors | Darlington Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 75 | 2500 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.012381 oz | 0.009185 oz | - |
| Maximum Collector Cut off Current | - | 50 uA | - |
| DC Collector/Base Gain hfe Min | - | 25 | - |
| Part # Aliases | - | NJVMJD32CT4G-VF01 | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| NJVMJD32CG | Bipolar Transistors - BJT BIP DPAK PNP 3A 100V | ||
| NJVMJD32CT4G | Darlington Transistors BIP DPAK PNP 3A 100V TR | ||
| NJVMJD32CT4G/MJD31C | Жаңа және түпнұсқа | ||
| NJVMJD32CT4G | Darlington Transistors BIP DPAK PNP 3A 100V TR | ||
ON Semiconductor |
NJVMJD32CT4G-VF01 | TRANS PNP 100V 3A DPAK | |
| NJVMJD32CG | Bipolar Transistors - BJT BIP DPAK PNP 3A 100V |