 |  | | |
| PartNumber | NE3510M04-A | NE3510M04 | NE3510M04-07-T2 |
| Description | RF JFET Transistors L-S Band Lo No Amp | ||
| Manufacturer | CEL | CEL | - |
| Product Category | RF JFET Transistors | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Transistor Type | HFET | HFET | - |
| Technology | GaAs | GaAs | - |
| Gain | 16 dB | 16 dB | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 4 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
| Id Continuous Drain Current | 97 mA | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 125 mW | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | FTSMM-4 (M04) | - | - |
| Operating Frequency | 4 GHz | 4 GHz | - |
| Product | RF JFET | - | - |
| Type | GaAs HFET | - | - |
| Brand | CEL | - | - |
| Forward Transconductance Min | 70 mS | - | - |
| Gate Source Cutoff Voltage | - 0.7 V | - 0.7 V | - |
| NF Noise Figure | 0.45 dB | - | - |
| P1dB Compression Point | 11 dBm | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | - | - |
| Package Case | - | FTSMM-4 (M04) | - |
| Pd Power Dissipation | - | 125 mW | - |
| Id Continuous Drain Current | - | 97 mA | - |
| Vds Drain Source Breakdown Voltage | - | 4 V | - |
| Forward Transconductance Min | - | 70 mS | - |
| Vgs Gate Source Breakdown Voltage | - | - 3 V | - |
| NF Noise Figure | - | 0.45 dB | - |
| P1dB Compression Point | - | 11 dBm | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
CEL |
NE3510M04-A | RF JFET Transistors L-S Band Lo No Amp | |
| NE3510M04-A | RF JFET Transistors L-S Band Lo No Amp | ||
| NE3510M04-T2-A | RF JFET Transistors L-S Band Lo No Amp | ||
| NE3510M04 | Жаңа және түпнұсқа | ||
| NE3510M04-07-T2 | Жаңа және түпнұсқа | ||
| NE3510M04-T1-A | Жаңа және түпнұсқа | ||
| NE3510M04-T2 | Жаңа және түпнұсқа | ||
| NE3510M04T2 | Жаңа және түпнұсқа |