 |  |  | |
| PartNumber | NCV84160DR2G | NCV8411DTRKG | NCV8416MNR2G |
| Description | MOSFET 160MOHM SMARTFET | MOSFET LS SMART FET MPW | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOIC-8 | DPAK-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 41 V | 42 V | - |
| Id Continuous Drain Current | 3.5 mA | 45 A | - |
| Rds On Drain Source Resistance | 160 mOhms | 29 mOhms | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.49 W | 2.7 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 10 us | 53 us | - |
| Typical Turn On Delay Time | 10 us | 29 us | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Vgs Gate Source Voltage | - | 14 V | - |
| Transistor Type | - | 1 N-Channel | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| NCV84160DR2G | MOSFET 160MOHM SMARTFET | ||
| NCV8411DTRKG | MOSFET LS SMART FET MPW | ||
| NCV8411DTRKG | LS SMART FET MPW | ||
| NCV8416MNR2G | Жаңа және түпнұсқа | ||
ON Semiconductor |
NCV84160DR2G | 160MOHM SMARTFET |