MWI50-12

MWI50-12T7T vs MWI50-12A7T

 
PartNumberMWI50-12T7TMWI50-12A7T
DescriptionDiscrete Semiconductor Modules 50 Amps 1200VIGBT Modules 50 Amps 1200V
ManufacturerIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesIGBT Modules
RoHSYY
ProductPower Semiconductor ModulesIGBT Silicon Modules
TypeSix-Pack-
Mounting StyleScrew MountChassis Mount
Package / CaseE2E2
SeriesMWI50MWI50
PackagingBulkBulk
BrandIXYSIXYS
Product TypeDiscrete Semiconductor ModulesIGBT Modules
Factory Pack Quantity66
SubcategoryDiscrete Semiconductor ModulesIGBTs
Configuration-Hex
Collector Emitter Voltage VCEO Max-1200 V
Continuous Collector Current at 25 C-85 A
Minimum Operating Temperature-- 40 C
Maximum Operating Temperature-+ 150 C
Height-17 mm
Length-107.5 mm
Width-45 mm
Maximum Gate Emitter Voltage-20 V
Өндіруші Бөлім № Сипаттама RFQ
Littelfuse
Littelfuse
MWI50-12T7T Discrete Semiconductor Modules 50 Amps 1200V
MWI50-12A7T IGBT Modules 50 Amps 1200V
MWI50-12T7T Discrete Semiconductor Modules 50 Amps 1200V
MWI50-12A7T IGBT Modules 50 Amps 1200V
MWI50-12A Жаңа және түпнұсқа
MWI50-12A5 Жаңа және түпнұсқа
MWI50-12A7 MOD IGBT SIXPACK RBSOA 1200V E2
MWI50-12E6K MOD IGBT SIXPACK RBSOA 1200V E1
MWI50-12E7 MOD IGBT SIXPACK H-BRDG 1200V E2
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