MUN5135D

MUN5135DW1T1G vs MUN5135DW1T1 vs MUN5135DW1T1G/

 
PartNumberMUN5135DW1T1GMUN5135DW1T1MUN5135DW1T1G/
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT PNPBipolar Transistors - Pre-Biased 100mA 50V BRT PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYN-
ConfigurationDualDual-
Transistor PolarityPNPPNP-
Typical Input Resistor2.2 kOhms2.2 kOhms-
Typical Resistor Ratio0.0470.047-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-88-6SC-88-6-
DC Collector/Base Gain hfe Min8080-
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current- 0.1 A- 0.1 A-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation250 mW250 mW-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMUN5135DW1--
PackagingReelReel-
DC Current Gain hFE Max80 at 5 mA at 10 V80 at 5 mA at 10 V-
Height0.9 mm0.9 mm-
Length2 mm2 mm-
Width1.25 mm1.25 mm-
BrandON SemiconductorON Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000219 oz--
Өндіруші Бөлім № Сипаттама RFQ
MUN5135DW1T1G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MUN5135DW1T1G/ Жаңа және түпнұсқа
ON Semiconductor
ON Semiconductor
MUN5135DW1T1 Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MUN5135DW1T1 TRANS 2PNP PREBIAS 0.25W SOT363
MUN5135DW1T1G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
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