MUN2111T1G

MUN2111T1G vs MUN2111T1G /6A vs MUN2111T1G , DS1815

 
PartNumberMUN2111T1GMUN2111T1G /6AMUN2111T1G , DS1815
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSC-59-3--
DC Collector/Base Gain hfe Min35, 60--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation230 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMUN2111--
PackagingReel--
DC Current Gain hFE Max35--
Height1.09 mm--
Length2.9 mm--
Width1.5 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Өндіруші Бөлім № Сипаттама RFQ
MUN2111T1G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MUN2111T1G /6A Жаңа және түпнұсқа
MUN2111T1G , DS1815 Жаңа және түпнұсқа
MUN2111T1G-CUT TAPE Жаңа және түпнұсқа
ON Semiconductor
ON Semiconductor
MUN2111T1G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
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