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| PartNumber | MT3S20P(TE12L,F) | MT3S20P(TE12LF)CT-ND | MT3S20P |
| Description | RF Bipolar Transistors X34 Pb-FREE PW-MINI DIODE | ||
| Manufacturer | Toshiba | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 100 | - | - |
| Collector Emitter Voltage VCEO Max | 12 V | - | - |
| Emitter Base Voltage VEBO | 1.5 V | - | - |
| Continuous Collector Current | 80 mA | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-62-3 | - | - |
| Packaging | Reel | - | - |
| Operating Frequency | 7 GHz | - | - |
| Output Power | 1.8 W | - | - |
| Brand | Toshiba | - | - |
| Maximum DC Collector Current | 80 mA | - | - |
| Pd Power Dissipation | 400 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |