 | |  | |
| PartNumber | MRF5S21100HR5 | MRF5S21100HR3 | MRF5S21100H |
| Description | RF MOSFET Transistors HV5 LDMOS WCDMA NI780H | RF MOSFET Transistors HV5 LDMOS WCDMA NI780H | |
| Manufacturer | NXP | NXP | - |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
| RoHS | N | Y | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Technology | Si | Si | - |
| Vds Drain Source Breakdown Voltage | 65 V | 65 V | - |
| Gain | 13.5 dB | 13.5 dB | - |
| Output Power | 23 W | 23 W | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | NI-780-3 | NI-780-3 | - |
| Packaging | Reel | Reel | - |
| Configuration | Single | Single | - |
| Height | 4.32 mm | 4.32 mm | - |
| Length | 34.16 mm | 34.16 mm | - |
| Operating Frequency | 2.11 GHz to 2.17 GHz | 2.11 GHz to 2.17 GHz | - |
| Type | RF Power MOSFET | RF Power MOSFET | - |
| Width | 9.91 mm | 9.91 mm | - |
| Brand | NXP / Freescale | NXP / Freescale | - |
| Channel Mode | Enhancement | Enhancement | - |
| Pd Power Dissipation | 273 W | 273 W | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 50 | 250 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | - 0.5 V, 15 V | - 0.5 V, 15 V | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | - |
| Unit Weight | 0.226635 oz | 0.226635 oz | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
NXP / Freescale |
MRF5S21100HR5 | RF MOSFET Transistors HV5 LDMOS WCDMA NI780H | |
| MRF5S21100HR3 | RF MOSFET Transistors HV5 LDMOS WCDMA NI780H | ||
| MRF5S21100H | Жаңа және түпнұсқа | ||
NXP Semiconductors |
MRF5S21100HSR3 | FET RF 65V 2.17GHZ NI-780S | |
| MRF5S21100HSR5 | FET RF 65V 2.17GHZ NI-780S | ||
| MRF5S21100HR3 | FET RF 65V 2.17GHZ NI-780 | ||
| MRF5S21100HR5 | FET RF 65V 2.17GHZ NI-780 |