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| PartNumber | MMUN2114LT3G | MMUN2114LT1G | MMUN2114LT1 |
| Description | Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V SOT23 | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | TRANS PREBIAS PNP 246MW SOT23-3 |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | Y | - |
| Series | MMUN2114L | MMUN2114L | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 10000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Configuration | - | Single | - |
| Transistor Polarity | - | PNP | - |
| Typical Input Resistor | - | 10 kOhms | - |
| Typical Resistor Ratio | - | 0.21 | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SOT-23-3 | - |
| DC Collector/Base Gain hfe Min | - | 80 | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| Continuous Collector Current | - | 0.1 A | - |
| Peak DC Collector Current | - | 100 mA | - |
| Pd Power Dissipation | - | 246 mW | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| DC Current Gain hFE Max | - | 80 | - |
| Height | - | 0.94 mm | - |
| Length | - | 2.9 mm | - |
| Width | - | 1.3 mm | - |
| Unit Weight | - | 0.000282 oz | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
ON Semiconductor |
MMUN2114LT3G | Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V SOT23 | |
| MMUN2114LT1G | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | ||
| MMUN2114LT1 | TRANS PREBIAS PNP 246MW SOT23-3 | ||
| MMUN2114LT3G | Schottky Diodes & Rectifiers SS BR XSTR PNP 50V SOT23 | ||
| MMUN2114LT1G | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | ||
| MMUN2114LT1 , CMPT5087TR | Жаңа және түпнұсқа | ||
| MMUN2114LTU1G | Жаңа және түпнұсқа | ||
| MMUN2114LT1G-CUT TAPE | Жаңа және түпнұсқа |