MMUN

MMUN2241LT1G vs MMUN2241LT1 vs MMUN2369LT1G

 
PartNumberMMUN2241LT1GMMUN2241LT1MMUN2369LT1G
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT NPNBipolar Transistors - Pre-Biased 100mA 50V BRT NPN
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYN-
ConfigurationSingleSingle-
Transistor PolarityNPNNPN-
Typical Input Resistor100 kOhms100 kOhms-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
DC Collector/Base Gain hfe Min160160-
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current0.1 A0.1 A-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation246 mW246 mW-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMUN2241L--
PackagingReelReel-
DC Current Gain hFE Max160160-
Height0.94 mm0.94 mm-
Length2.9 mm2.9 mm-
Width1.3 mm1.3 mm-
BrandON SemiconductorON Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz0.000282 oz-
  • -ден бастаңыз
  • MMUN 165
  • MMU 676
Өндіруші Бөлім № Сипаттама RFQ
ON Semiconductor
ON Semiconductor
MMUN2241LT1G Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
MMUN2241LT1 TRANS PREBIAS NPN 246MW SOT23-3
MMUN2241LT1G TRANS PREBIAS NPN 246MW SOT23-3
MMUN2369LT1G Жаңа және түпнұсқа
MMUN5133T1G Жаңа және түпнұсқа
MMUN5233T1G Жаңа және түпнұсқа
MMUN5236DW1T1G Жаңа және түпнұсқа
MMUN5211 Жаңа және түпнұсқа
MMUN5211DW1T1G Жаңа және түпнұсқа
MMUN5214DW1T1G Жаңа және түпнұсқа
MMUN5233DW1T1G Жаңа және түпнұсқа
MMUN5234DW1T1G Жаңа және түпнұсқа
MMUN5311DW1T1 Жаңа және түпнұсқа
MMUN5314DW1T1G Жаңа және түпнұсқа
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