MJE18002

MJE18002G vs MJE18002 vs MJE18002D2

 
PartNumberMJE18002GMJE18002MJE18002D2
DescriptionBipolar Transistors - BJT 2A 450V 40W NPNTRANS NPN 450V 2A TO220ABPower Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
ManufacturerON SemiconductorON-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max450 V--
Collector Base Voltage VCBO9 V--
Emitter Base Voltage VEBO9 V--
Collector Emitter Saturation Voltage0.92 V--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT13 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Height9.28 mm (Max)--
Length10.28 mm (Max)--
PackagingTube--
Width4.82 mm (Max)--
BrandON Semiconductor--
Continuous Collector Current2 A--
DC Collector/Base Gain hfe Min14--
Pd Power Dissipation50 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.211644 oz--
Өндіруші Бөлім № Сипаттама RFQ
ON Semiconductor
ON Semiconductor
MJE18002G Bipolar Transistors - BJT 2A 450V 40W NPN
MJE18002 TRANS NPN 450V 2A TO220AB
MJE18002G TRANS NPN 450V 2A TO220AB
MJE18002D2 Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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