MJD127G

MJD127G vs MJD127G/MJD122G

 
PartNumberMJD127GMJD127G/MJD122G
DescriptionDarlington Transistors 8A 100V Bipolar Power PNP
ManufacturerON SemiconductorON/FAI
Product CategoryDarlington TransistorsIC Chips
RoHSY-
ConfigurationSingle-
Transistor PolarityPNP-
Collector Emitter Voltage VCEO Max100 V-
Emitter Base Voltage VEBO5 V-
Collector Base Voltage VCBO100 V-
Maximum DC Collector Current8 A-
Maximum Collector Cut off Current10 uA-
Pd Power Dissipation20 W-
Mounting StyleSMD/SMT-
Package / CaseTO-252-3 (DPAK)-
Minimum Operating Temperature- 65 C-
Maximum Operating Temperature+ 150 C-
SeriesMJD127-
PackagingTube-
Height2.38 mm-
Length6.73 mm-
Width6.22 mm-
BrandON Semiconductor-
Continuous Collector Current8 A-
DC Collector/Base Gain hfe Min100, 1000-
Product TypeDarlington Transistors-
Factory Pack Quantity75-
SubcategoryTransistors-
Unit Weight0.023457 oz-
Өндіруші Бөлім № Сипаттама RFQ
MJD127G Darlington Transistors 8A 100V Bipolar Power PNP
MJD127G/MJD122G Жаңа және түпнұсқа
ON Semiconductor
ON Semiconductor
MJD127G Darlington Transistors 8A 100V Bipolar Power PNP
Top