MIEB

MIEB101H1200EH vs MIEB100W1200TEH vs MIEB100W1200DPFTEH

 
PartNumberMIEB101H1200EHMIEB100W1200TEHMIEB100W1200DPFTEH
DescriptionIGBT Modules IGBT Module H BridgeIGBT Modules Six Pack SPT IGBT
ManufacturerIXYSIXYS-
Product CategoryIGBT ModulesIGBT Modules-
ConfigurationHalf BridgeSix-Pack-
Collector Emitter Voltage VCEO Max1.2 kV1.2 kV-
Collector Emitter Saturation Voltage1.8 V1.8 V-
Continuous Collector Current at 25 C183 A183 A-
Gate Emitter Leakage Current200 nA200 nA-
Pd Power Dissipation630 W630 W-
Package / CaseE3-PackE3-Pack-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 125 C+ 125 C-
PackagingBulkBulk-
SeriesMIEB101H1200EHMIEB100W1200TEH-
BrandIXYSIXYS-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity55-
SubcategoryIGBTsIGBTs-
  • -ден бастаңыз
  • MIEB 7
  • MIE 111
Өндіруші Бөлім № Сипаттама RFQ
Littelfuse
Littelfuse
MIEB101H1200EH IGBT Modules IGBT Module H Bridge
MIEB101W1200EH IGBT Modules Six-Pack SPT IGBT
MIEB100W1200TEH IGBT Modules Six Pack SPT IGBT
MIEB100W1200DPFTEH Жаңа және түпнұсқа
MIEB101W1200DPFEH Жаңа және түпнұсқа
MIEB450W1200TFH Жаңа және түпнұсқа
MIEB76H1200EH Жаңа және түпнұсқа
MIEB100W1200TEH IGBT Modules Six Pack SPT IGBT
MIEB101W1200EH IGBT Modules Six-Pack SPT IGBT
MIEB101H1200EH IGBT Modules IGBT Module H Bridge
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