| PartNumber | KSD1408YTU | KSD1408GTU | KSD1408OTU |
| Description | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | Bipolar Transistors - BJT NPN Epitaxial Sil |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | E | E | E |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220F-3 | TO-220F-3 | TO-220F-3 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 80 V | 80 V | 80 V |
| Collector Base Voltage VCBO | 80 V | 80 V | 80 V |
| Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 0.45 V | 0.45 V | 0.45 V |
| Maximum DC Collector Current | 4 A | 4 A | 4 A |
| Gain Bandwidth Product fT | 8 MHz | 8 MHz | 8 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | KSD1408 | - | KSD1408 |
| DC Current Gain hFE Max | 240 | 240 | 240 |
| Height | 9.19 mm | 9.19 mm | 9.19 mm |
| Length | 10.16 mm | 10.16 mm | 10.16 mm |
| Packaging | Tube | Tube | Tube |
| Width | 4.7 mm | 4.7 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Continuous Collector Current | 4 A | 4 A | 4 A |
| DC Collector/Base Gain hfe Min | 40 | 40 | 40 |
| Pd Power Dissipation | 25 W | 25 W | 25 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 | 50 | 50 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | KSD1408YTU_NL | - | - |
| Unit Weight | 0.080072 oz | 0.080072 oz | 0.080072 oz |