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| PartNumber | Jantx2N2369AUB | JANTX2N2369A | JANTX2N2369A/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 15 V | 15 V | 15 V |
| Collector Base Voltage VCBO | 40 V | 40 V | 40 V |
| Emitter Base Voltage VEBO | 4.5 V | 4.5 V | 4.5 V |
| Collector Emitter Saturation Voltage | 0.45 V | 200 mV | 0.2 V |
| Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
| DC Current Gain hFE Max | 120 | 120 at 10 mA, 350 mVDC | 120 at 100 mA, 1 V |
| Packaging | Waffle | Bulk | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 20 | 40 at 10 mA, 350 mVDC | 20 at 100 mA, 1 V |
| Pd Power Dissipation | 500 mW | 360 mW | 0.36 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Package / Case | - | TO-18-3 | TO-206AA-3 |
| Maximum DC Collector Current | - | - | 0.1 A |