 | |  | |
| PartNumber | JANTXV2N4261UB | JANTXV2N4261 | JANTXV2N4261/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Packaging | Waffle | Bulk | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | - | Si |
| Mounting Style | - | - | Through Hole |
| Package / Case | - | - | TO-72-3 |
| Transistor Polarity | - | - | PNP |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | - 15 V |
| Collector Base Voltage VCBO | - | - | - 15 V |
| Emitter Base Voltage VEBO | - | - | - 4.5 V |
| Collector Emitter Saturation Voltage | - | - | - 0.15 V |
| Maximum DC Collector Current | - | - | - 30 mA |
| Minimum Operating Temperature | - | - | - 65 C |
| Maximum Operating Temperature | - | - | + 200 C |
| DC Current Gain hFE Max | - | - | 150 at - 10 mA, - 1 V |
| DC Collector/Base Gain hfe Min | - | - | 20 at - 30 mA, - 1 V |
| Pd Power Dissipation | - | - | 200 mW |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Microchip / Microsemi |
JANTXV2N4261UB | Bipolar Transistors - BJT Small-Signal BJT | |
| JANTXV2N4261 | Bipolar Transistors - BJT Small-Signal BJT | ||
| JANTXV2N4261/TR | Bipolar Transistors - BJT | ||
| JANTXV2N4261UB/TR | Bipolar Transistors - BJT |