 | |  | |
| PartNumber | JANS2N6989/TR | Jans2N6987/TR | JANS2N6987U |
| Description | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Trans GP BJT PNP 60V 600mA 20-Pin SMD Tray - Trays (Alt: JANS2N6987U) |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | N | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-116-14 | TO-116-14 | - |
| Transistor Polarity | NPN | PNP | - |
| Configuration | Quad | Quad | - |
| Collector Emitter Voltage VCEO Max | 50 V | 60 V | - |
| Collector Base Voltage VCBO | 75 V | 60 V | - |
| Emitter Base Voltage VEBO | 6 V | 5 V | - |
| Collector Emitter Saturation Voltage | 0.3 V | 1.6 V | - |
| Maximum DC Collector Current | 800 mA | 600 mA | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| DC Current Gain hFE Max | 325 at 1 mA, 10 V | 450 at 1 mA, 10 V | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| DC Collector/Base Gain hfe Min | 30 at 500 mA, 10 V | 50 at 500 mA, 10 V | - |
| Pd Power Dissipation | 1.5 W | 1.5 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | Transistors | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Microchip / Microsemi |
JANS2N6989/TR | Bipolar Transistors - BJT | |
| Jans2N6987/TR | Bipolar Transistors - BJT | ||
| JANS2N6989U | Trans GP BJT NPN 50V 800mA 20-Pin SMD Tray - Bulk (Alt: JANS2N6989U) | ||
| JANS2N6987U | Trans GP BJT PNP 60V 600mA 20-Pin SMD Tray - Trays (Alt: JANS2N6987U) |