 | |  | |
| PartNumber | Jans2N2219A/TR | JANS2N2219/TR | JANS2N2219A |
| Description | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Trans GP BJT NPN 50V 0.8A 3-Pin TO-39 |
| Manufacturer | Microchip | Microchip | Microsemi |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
| RoHS | N | N | No |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-39-3 | TO-39-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 50 V | 30 V | - |
| Collector Base Voltage VCBO | 75 V | 60 V | - |
| Emitter Base Voltage VEBO | 6 V | 5 V | - |
| Collector Emitter Saturation Voltage | 0.3 V | 0.4 V | - |
| Maximum DC Collector Current | 800 mA | 800 mA | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| DC Current Gain hFE Max | 325 at 1 mA, 10 V | 325 at 1 mA, 10 V | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microsemi |
| DC Collector/Base Gain hfe Min | 50 at 100 uA, 10 V | 35 at 100 uA, 10 V | - |
| Pd Power Dissipation | 3 W | 3 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | Transistors | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Microchip / Microsemi |
JANS2N2219AL/TR | Bipolar Transistors - BJT | |
| Jans2N2219A/TR | Bipolar Transistors - BJT | ||
| JANS2N2219/TR | Bipolar Transistors - BJT | ||
| JANS2N2219A | Trans GP BJT NPN 50V 0.8A 3-Pin TO-39 | ||
| JANS2N2219AL | JANS2N2219AL - Bulk (Alt: JANS2N2219AL) | ||
| JANS2N2219A/TR | Trans GP BJT NPN 50V 800mA 3-Pin TO-39 T/R - Tape and Reel (Alt: JANS2N2219A/TR) | ||
| JANS2N2219AL/TR | Trans GP BJT NPN 50V 800mA 3-Pin TO-5 T/R - Tape and Reel (Alt: JANS2N2219AL/TR) |