 |  |  | |
| PartNumber | IXYP10N65B3D1 | IXYP10N65C3D1 | IXYP10N65C3 |
| Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-220AB/FP | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT 650V 30A 160W TO220 |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Product | Diode Power Modules | - | - |
| Type | GenX3 | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Packaging | Tube | Tube | - |
| Configuration | Single | - | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | - | - |
| Fall Time | 30 ns | - | - |
| Id Continuous Drain Current | 32 A | - | - |
| Pd Power Dissipation | 160 W | - | - |
| Product Type | Discrete Semiconductor Modules | IGBT Transistors | - |
| Rise Time | 29 ns | - | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | Discrete Semiconductor Modules | IGBTs | - |
| Tradename | XPT | XPT, GenX3 | - |
| Typical Turn Off Delay Time | 125 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Technology | - | Si | - |
| Series | - | Planar | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Littelfuse |
IXYP10N65B3D1 | Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-220AB/FP | |
| IXYP10N65C3D1 | IGBT Transistors DISC IGBT XPT-GENX3 | ||
| IXYP10N65C3D1M | IGBT Transistors DISC IGBT XPT-GENX3 | ||
| IXYP10N65C3D1 | IGBT 650V 30A 160W TO-220 | ||
| IXYP10N65C3 | IGBT 650V 30A 160W TO220 | ||
| IXYP10N65C3D1M | IGBT |