 |  | | |
| PartNumber | IXYN120N120C3 | IXYN120N65B3D1 | IXYN120N65C3D1 |
| Description | IGBT Transistors DISC IGBT XPT-GENX3 (MINI | IGBT Transistors DISC IGBT XPT-GENX3 SOT-227UI( | IGBT Transistors DISC IGBT XPT-GENX3 SOT-227UI( |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Series | Planar | - | - |
| Packaging | Tube | - | - |
| Brand | IXYS | IXYS | IXYS |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | XPT, GenX3 | - | - |
| Unit Weight | 1 oz | - | - |
| Package / Case | - | SOT-227B-4 | SOT-227B-4 |
| Mounting Style | - | Screw Mount | Screw Mount |
| Configuration | - | Single | Single |
| Collector Emitter Voltage VCEO Max | - | 650 V | 650 V |
| Collector Emitter Saturation Voltage | - | 1.55 V | 2.3 V |
| Maximum Gate Emitter Voltage | - | 20 V | 20 V |
| Continuous Collector Current at 25 C | - | 250 A | 190 A |
| Pd Power Dissipation | - | 830 W | 830 W |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Continuous Collector Current Ic Max | - | 770 A | 620 A |
| Gate Emitter Leakage Current | - | 100 nA | 100 nA |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Littelfuse |
IXYN120N120C3 | IGBT Transistors DISC IGBT XPT-GENX3 (MINI | |
| IXYN120N65B3D1 | IGBT Transistors DISC IGBT XPT-GENX3 SOT-227UI( | ||
| IXYN120N65C3D1 | IGBT Transistors DISC IGBT XPT-GENX3 SOT-227UI( | ||
| IXYN120N120C3 | IGBT 1200 SOT227B |