| PartNumber | IXYN100N120B3H1 | IXYN100N120C3H1 | IXYN100N120C3 |
| Description | IGBT Transistors DISC IGBT XPT-GENX3 SOT-227UI( | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Series | Planar | IXYN100N120 | IXYN100N120 |
| Packaging | Tube | Tube | Tube |
| Brand | IXYS | IXYS | IXYS |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | XPT, GenX3 | XPT, GenX3 | XPT |
| Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |
| Package / Case | - | SOT-227B-4 | SOT-227B-4 |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Configuration | - | Single | Single |
| Collector Emitter Voltage VCEO Max | - | 1.2 kV | 1200 V |
| Collector Emitter Saturation Voltage | - | 2.9 V | 2.9 V |
| Maximum Gate Emitter Voltage | - | 20 V | 30 V |
| Continuous Collector Current at 25 C | - | 134 A | 152 A |
| Pd Power Dissipation | - | 690 W | 830 W |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 175 C |
| Continuous Collector Current Ic Max | - | 440 A | 152 A |
| Height | - | 9.6 mm | - |
| Length | - | 38.23 mm | - |
| Operating Temperature Range | - | - 55 C to + 150 C | - |
| Width | - | 25.42 mm | - |
| Continuous Collector Current | - | 134 A | - |
| Gate Emitter Leakage Current | - | 100 nA | 100 nA |