| PartNumber | IXYH40N120B3D1 | IXYH40N120C3 | IXYH40N120B3 |
| Description | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors GenX3 1200V XPT IGBT | IGBT Transistors DISC IGBT XPT-GENX3 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-247AD-3 | TO-247AD-3 | TO-247AD-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Series | Planar | IXYH40N120 | - |
| Packaging | Tube | Tube | Tube |
| Brand | IXYS | IXYS | IXYS |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | XPT, GenX3 | XPT | XPT, GenX3 |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 1200 V | - |
| Collector Emitter Saturation Voltage | - | 3.6 V | - |
| Maximum Gate Emitter Voltage | - | 30 V | - |
| Continuous Collector Current at 25 C | - | 70 A | - |
| Pd Power Dissipation | - | 577 W | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Continuous Collector Current Ic Max | - | 70 A | - |
| Gate Emitter Leakage Current | - | 100 nA | - |
| Unit Weight | - | 1.340411 oz | - |