 |  |  | |
| PartNumber | IXTY08N100D2-TRL | IXTY08N100D2 | IXTY08N100D2TRL |
| Description | Discrete Semiconductor Modules Depletion Mode MOSFET | MOSFET 8mAmps 1000V | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | MOSFET | - |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | Depletion Mode | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Reel | Tube | - |
| Configuration | Single | Single | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Fall Time | 48 ns | 48 ns | - |
| Id Continuous Drain Current | 800 mA | 800 mA | - |
| Pd Power Dissipation | 60 W | 60 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Rds On Drain Source Resistance | 21 Ohms | 21 Ohms | - |
| Rise Time | 57 ns | 57 ns | - |
| Factory Pack Quantity | 2500 | 70 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Typical Turn Off Delay Time | 34 ns | 34 ns | - |
| Typical Turn On Delay Time | 28 ns | 28 ns | - |
| Vds Drain Source Breakdown Voltage | 1000 V | 1 kV | - |
| Vgs th Gate Source Threshold Voltage | - 4 V | 2 V | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Qg Gate Charge | - | 14.6 nC | - |
| Channel Mode | - | Depletion | - |
| Series | - | IXTY08N100 | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 330 mS | - |
| Unit Weight | - | 0.081130 oz | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Littelfuse |
IXTY08N100D2-TRL | Discrete Semiconductor Modules Depletion Mode MOSFET | |
| IXTY08N100D2 | MOSFET 8mAmps 1000V | ||
| IXTY08N100D2 | MOSFET N-CH 1000V 800MA DPAK | ||
| IXTY08N100D2TRL | Жаңа және түпнұсқа |