 |  | | |
| PartNumber | IXTU01N100 | IXTU01N100D | IXTU01N80 |
| Description | MOSFET 0.1 Amps 1000V 80 Rds | MOSFET N-CH 1000V 0.1A TO-251 | MOSFET N-CH 800V 0.1A TO-251 |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 1 kV | - | - |
| Id Continuous Drain Current | 100 mA | - | - |
| Rds On Drain Source Resistance | 80 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 25 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 6.22 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | IXTU01N100 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 2.38 mm | - | - |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 160 mS | - | - |
| Fall Time | 28 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 70 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Unit Weight | 0.015168 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Littelfuse |
IXTU01N100 | MOSFET 0.1 Amps 1000V 80 Rds | |
| IXTU01N100D | MOSFET N-CH 1000V 0.1A TO-251 | ||
| IXTU01N80 | MOSFET N-CH 800V 0.1A TO-251 | ||
| IXTU01N100 | IGBT Transistors MOSFET 0.1 Amps 1000V 80 Rds |