IXTQ52

IXTQ52P10P vs IXTQ52N30P vs IXTQ52N30P/FDA59N30

 
PartNumberIXTQ52P10PIXTQ52N30PIXTQ52N30P/FDA59N30
DescriptionMOSFET -52.0 Amps -100V 0.050 RdsMOSFET 52 Amps 300V 0.066 Ohm Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3P-3TO-3P-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V300 V-
Id Continuous Drain Current52 A52 A-
Rds On Drain Source Resistance50 mOhms66 mOhms-
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge60 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation300 W400 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenamePolarP--
PackagingTubeTube-
Height20.1 mm20.3 mm-
Length15.8 mm15.8 mm-
SeriesIXTQ52P10IXTQ52N30-
Transistor Type1 P-Channel1 N-Channel-
TypePolarP Power MOSFET--
Width4.9 mm4.9 mm-
BrandIXYSIXYS-
Forward Transconductance Min12 S--
Fall Time22 ns20 ns-
Product TypeMOSFETMOSFET-
Rise Time29 ns22 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time38 ns60 ns-
Typical Turn On Delay Time22 ns24 ns-
Unit Weight0.194007 oz0.194007 oz-
Өндіруші Бөлім № Сипаттама RFQ
Littelfuse
Littelfuse
IXTQ52P10P MOSFET -52.0 Amps -100V 0.050 Rds
IXTQ52N30P MOSFET 52 Amps 300V 0.066 Ohm Rds
IXTQ52N30P/FDA59N30 Жаңа және түпнұсқа
IXTQ52P10P IGBT Transistors MOSFET -52.0 Amps -100V 0.050 Rds
IXTQ52N30P IGBT Transistors MOSFET 52 Amps 300V 0.066 Ohm Rds
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