| PartNumber | IXTP140N12T2 | IXTP140P05T | IXTP140N055T2 |
| Description | Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen2 TO-220AB/FP | MOSFET -140 Amps -50V 0.008 Rds | MOSFET 140 Amps 0V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Product | Power MOSFET Modules | - | - |
| Type | Trench T2 | TrenchP Power MOSFET | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 150 C | - |
| Packaging | Tube | Tube | Tube |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | P-Channel | N-Channel |
| Fall Time | 17 ns | 25 ns | - |
| Id Continuous Drain Current | 140 A | 140 A | 140 A |
| Pd Power Dissipation | 577 W | 298 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Rds On Drain Source Resistance | 10 mOhms | 9 mOhms | 5.4 mOhms |
| Rise Time | 30 ns | 34 ns | - |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Tradename | TrenchT2 | TrenchP | HiPerFET |
| Typical Turn Off Delay Time | 39 ns | 38 ns | - |
| Typical Turn On Delay Time | 27 ns | 28 ns | - |
| Vds Drain Source Breakdown Voltage | 120 V | 50 V | 55 V |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2 V | - |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Qg Gate Charge | - | 200 nC | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 16 mm | - |
| Length | - | 10.66 mm | - |
| Series | - | IXTP140P05 | IXTP140N055 |
| Transistor Type | - | 1 P-Channel | 1 N-Channel |
| Width | - | 4.83 mm | - |
| Forward Transconductance Min | - | 44 S | - |
| Unit Weight | - | 0.081130 oz | 0.012346 oz |