| PartNumber | IXTH16N10D2 | IXTH160N15T | IXTH160N10T |
| Description | MOSFET N-CH 100V 16A MOSFET | MOSFET 160Amps 150V | MOSFET 160 Amps 100V 6.9 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 150 V | 100 V |
| Id Continuous Drain Current | 16 A | 160 A | 160 A |
| Rds On Drain Source Resistance | 64 mOhms | 8 mOhms | 5.8 mOhms |
| Vgs Gate Source Voltage | 20 V | 30 V | 30 V |
| Qg Gate Charge | 225 nC | 160 nC | 132 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 830 W | 830 W | 430 W |
| Configuration | Single | Single | Single |
| Channel Mode | Depletion | Enhancement | Enhancement |
| Packaging | Tube | - | Tube |
| Product | MOSFET | - | - |
| Series | IXTH16N10D2 | - | IXTH160N10 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 11 S | 65 S | 65 S |
| Fall Time | 70 ns | 31 ns | 42 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 43 ns | 21 ns | 61 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 340 ns | 60 ns | 49 ns |
| Typical Turn On Delay Time | 45 ns | 21 ns | 33 ns |
| Unit Weight | 0.056438 oz | 0.056438 oz | 0.229281 oz |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | 2.5 V |
| Tradename | - | HiPerFET | HiPerFET |
| Height | - | - | 21.46 mm |
| Length | - | - | 16.26 mm |
| Width | - | - | 5.3 mm |