 |  | | |
| PartNumber | IXFX48N50Q | IXFX48N50 | IXFX48N50Q IXYS |
| Description | MOSFET 48 Amps 500V 0.1 Rds | ||
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 48 A | - | - |
| Rds On Drain Source Resistance | 100 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 500 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HyperFET | HyperFET | - |
| Packaging | Tube | Tube | - |
| Height | 21.34 mm | - | - |
| Length | 16.13 mm | - | - |
| Series | IXFX48N50 | HiPerFET | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.21 mm | - | - |
| Brand | IXYS | - | - |
| Fall Time | 10 ns | 10 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns | 22 ns | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 75 ns | 75 ns | - |
| Typical Turn On Delay Time | 33 ns | 33 ns | - |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |
| Package Case | - | TO-247-3 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | PLUS247-3 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 500W | - |
| Drain to Source Voltage Vdss | - | 500V | - |
| Input Capacitance Ciss Vds | - | 7000pF @ 25V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 48A (Tc) | - |
| Rds On Max Id Vgs | - | 100 mOhm @ 24A, 10V | - |
| Vgs th Max Id | - | 4V @ 4mA | - |
| Gate Charge Qg Vgs | - | 190nC @ 10V | - |
| Pd Power Dissipation | - | 500 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 48 A | - |
| Vds Drain Source Breakdown Voltage | - | 500 V | - |
| Rds On Drain Source Resistance | - | 100 mOhms | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Littelfuse |
IXFX48N60Q3 | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/48A | |
| IXFX48N60P | MOSFET 600V 48A | ||
| IXFX48N50Q | MOSFET 48 Amps 500V 0.1 Rds | ||
| IXFX48N50 | Жаңа және түпнұсқа | ||
| IXFX48N50Q IXYS | Жаңа және түпнұсқа | ||
| IXFX48N60P | Darlington Transistors MOSFET 600V 48A | ||
| IXFX48N50Q | MOSFET 48 Amps 500V 0.1 Rds | ||
| IXFX48N60Q3 | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/48A |