| PartNumber | IXFP4N60P3 | IXFP4N100PM | IXFP4N100P |
| Description | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | MOSFET DISCMOSFETN-CH HIPERFET-POLA | MOSFET 4 Amps 1000V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220FP-3 | TO-220-3 |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 1 kV | 1 kV |
| Id Continuous Drain Current | 4 A | 2.1 A | 4 A |
| Rds On Drain Source Resistance | 2.2 Ohms | 3.3 Ohms | 3.3 Ohms |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | - | Tube |
| Series | IXFP4N60 | - | IXFP4N100 |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.012346 oz | - | 0.081130 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Vgs th Gate Source Threshold Voltage | - | 3 V | 6 V |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Qg Gate Charge | - | 26 nC | 26 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 40 W | 150 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 50 ns | 50 ns |
| Rise Time | - | 36 ns | 36 ns |
| Typical Turn Off Delay Time | - | 37 ns | 37 ns |
| Typical Turn On Delay Time | - | 24 ns | 24 ns |
| RoHS | - | - | Y |
| Forward Transconductance Min | - | - | 1.8 S |