 | |  | |
| PartNumber | IXFP102N15T | IXFP10N60P | IXFP10N06P |
| Description | MOSFET 102 Amps 0V | MOSFET HiPERFET Id10 BVdass600 | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | 600 V | - |
| Id Continuous Drain Current | 102 A | 10 A | - |
| Rds On Drain Source Resistance | 18 mOhms | 740 mOhms | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | - |
| Series | IXFP102N15 | IXFP10N60 | - |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.012346 oz | 0.081130 oz | - |
| Number of Channels | - | 1 Channel | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 200 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 9.15 mm | - |
| Length | - | 10.66 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 4.83 mm | - |
| Forward Transconductance Min | - | 11 S | - |
| Fall Time | - | 21 ns | - |
| Rise Time | - | 27 ns | - |
| Typical Turn Off Delay Time | - | 65 ns | - |
| Typical Turn On Delay Time | - | 23 ns | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Littelfuse |
IXFP10N80P | MOSFET 10 Amps 800V 1.1 Rds | |
| IXFP102N15T | MOSFET 102 Amps 0V | ||
| IXFP10N60P | MOSFET HiPERFET Id10 BVdass600 | ||
| IXFP10N06P | Жаңа және түпнұсқа | ||
| IXFP10N60P | Darlington Transistors MOSFET HiPERFET Id10 BVdass600 | ||
| IXFP10N80P | Darlington Transistors MOSFET 10 Amps 800V 1.1 Rds | ||
| IXFP102N15T | MOSFET N-CH 150V 102A TO-220 |