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| PartNumber | IXFN210N30P3 | IXFN210N20P | IXFN210N30X3 |
| Description | MOSFET N-Channel: Power MOSFET w/Fast Diode | MOSFET 188 Amps 200V 0.0105 Rds | MOSFET DISCMSFT NCHULTRJNCTX3CLAS (MI |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Package / Case | SOT-227-4 | SOT-227-4 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 300 V | 200 V | - |
| Id Continuous Drain Current | 192 A | 188 A | - |
| Rds On Drain Source Resistance | 14.5 mOhms | 10.5 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 268 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Pd Power Dissipation | 1.5 kW | 1.07 kW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | Tube | Tube |
| Series | IXFN210N30 | IXFN210N20 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | IXYS |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 94 ns | - | - |
| Typical Turn On Delay Time | 46 ns | - | - |
| Unit Weight | 1.058219 oz | 1.058219 oz | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Littelfuse |
IXFN210N30P3 | MOSFET N-Channel: Power MOSFET w/Fast Diode | |
| IXFN210N20P | MOSFET 188 Amps 200V 0.0105 Rds | ||
| IXFN210N30X3 | MOSFET DISCMSFT NCHULTRJNCTX3CLAS (MI | ||
| IXFN210N30P3 | MOSFET N-CH 300V 192A SOT-227 | ||
| IXFN210N20P | MOSFET N-CH 200V 188A SOT-227B | ||
| IXFN210N30X3 | FET N-CHANNEL |