| PartNumber | IXFK360N15T2 | IXFK360N10T | IXFK36N60 |
| Description | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A | MOSFET 600V 36A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-264 | TO-264-3 | TO-264-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
| Pd Power Dissipation | 1670 W | 1.25 kW | 500 W |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Product | MOSFET Gate Drivers | - | - |
| Series | IXFK360N15 | IXFK360N10 | IXFK36N60 |
| Brand | IXYS | IXYS | IXYS |
| Fall Time | 265 ns | 160 ns | 60 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 170 ns | 100 ns | 45 ns |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.352740 oz | 0.264555 oz | 0.352740 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 100 V | 600 V |
| Id Continuous Drain Current | - | 360 A | 36 A |
| Rds On Drain Source Resistance | - | 2.9 mOhms | 180 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 4.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Qg Gate Charge | - | 525 nC | - |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Forward Transconductance Min | - | 180 S | 36 S |
| Typical Turn Off Delay Time | - | 80 ns | 100 ns |
| Typical Turn On Delay Time | - | 47 ns | 30 ns |
| Height | - | - | 26.16 mm |
| Length | - | - | 19.96 mm |
| Width | - | - | 5.13 mm |