IXFH52N

IXFH52N50P2 vs IXFH52N30Q vs IXFH52N30P

 
PartNumberIXFH52N50P2IXFH52N30QIXFH52N30P
DescriptionMOSFET PolarP2 Power MOSFETMOSFET 300V 52AMOSFET 52 Amps 300V 0.066 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V300 V300 V
Id Continuous Drain Current52 A52 A52 A
Rds On Drain Source Resistance120 mOhms60 mOhms73 mOhms
Vgs Gate Source Voltage30 V20 V20 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation960 W360 W400 W
ConfigurationSingleSingleSingle
TradenameHiPerFETHiPerFETHiPerFET
PackagingTubeTubeTube
SeriesIXFH52N50IXFH52N30IXFH52N30
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarP2 HiPerFET-Polar Power MOSFETs HiPerFET
BrandIXYSIXYSIXYS
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.229281 oz0.229281 oz0.229281 oz
Channel Mode-EnhancementEnhancement
Height-21.46 mm21.46 mm
Length-16.26 mm16.26 mm
Width-5.3 mm5.3 mm
Forward Transconductance Min-35 S20 S
Fall Time-25 ns20 ns
Rise Time-60 ns22 ns
Typical Turn Off Delay Time-80 ns60 ns
Typical Turn On Delay Time-27 ns24 ns
Vgs th Gate Source Threshold Voltage--5 V
Qg Gate Charge--110 nC
Өндіруші Бөлім № Сипаттама RFQ
Littelfuse
Littelfuse
IXFH52N50P2 MOSFET PolarP2 Power MOSFET
IXFH52N30Q MOSFET 300V 52A
IXFH52N30P MOSFET 52 Amps 300V 0.066 Rds
IXFH52N50P2 Darlington Transistors MOSFET PolarP2 Power MOSFET
IXFH52N30Q MOSFET 300V 52A
IXFH52N30P IGBT Transistors MOSFET 52 Amps 300V 0.066 Rds
IXFH52N30P3 Жаңа және түпнұсқа
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