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| PartNumber | IXFB100N50Q3 | IXFB100N50P |
| Description | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A | MOSFET 100 Amps 500V 0.05 Ohms Rds |
| Manufacturer | IXYS | IXYS |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | PLUS-264-3 | PLUS-264-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Id Continuous Drain Current | 100 A | 100 A |
| Rds On Drain Source Resistance | 49 mOhms | 49 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 255 nC | 240 nC |
| Pd Power Dissipation | 1.56 kW | 1.25 kW |
| Configuration | Single | Single |
| Tradename | HiPerFET | HiPerFET |
| Packaging | Tube | Tube |
| Series | IXFB100N50 | IXFB100N50 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS |
| Product Type | MOSFET | MOSFET |
| Rise Time | 250 ns | 29 ns |
| Factory Pack Quantity | 25 | 25 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.056438 oz | 0.056438 oz |
| Vgs th Gate Source Threshold Voltage | - | 5 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Channel Mode | - | Enhancement |
| Height | - | 26.59 mm |
| Length | - | 20.29 mm |
| Type | - | PolarHV HiPerFET Power MOSFET |
| Width | - | 5.31 mm |
| Forward Transconductance Min | - | 50 S |
| Fall Time | - | 26 ns |
| Typical Turn Off Delay Time | - | 110 ns |
| Typical Turn On Delay Time | - | 36 ns |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Littelfuse |
IXFB100N50Q3 | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A | |
| IXFB100N50P | MOSFET 100 Amps 500V 0.05 Ohms Rds | ||
| IXFB100N50P | MOSFET N-CH 500V 100A PLUS264 | ||
| IXFB100N50Q3 | MOSFET N-CH 500V 100A PLUS264 | ||
| IXFB100N | Жаңа және түпнұсқа | ||
| IXFB100N50 | Жаңа және түпнұсқа |