 |  |  | |
| PartNumber | IXBT16N170A | IXBT16N170AHV | IXBT16N170 |
| Description | IGBT Transistors 1700V 16A | IGBT Transistors DISC IGBT BIMOSFET-HIGH VOLT | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Package / Case | TO-268-3 | TO-268HV-2 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 1700 V | 1.7 kV | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Pd Power Dissipation | 150 W | 150 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | IXBT16N170 | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 16 A | 40 A | - |
| Height | 5.1 mm | - | - |
| Length | 16.05 mm | - | - |
| Width | 14 mm | - | - |
| Brand | IXYS | IXYS | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | IGBTs | IGBTs | - |
| Tradename | BIMOSFET | - | - |
| Unit Weight | 0.158733 oz | - | - |
| Collector Emitter Saturation Voltage | - | 6 V | - |
| Continuous Collector Current at 25 C | - | 16 A | - |
| Gate Emitter Leakage Current | - | 100 nA | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Littelfuse |
IXBT16N170A | IGBT Transistors 1700V 16A | |
| IXBT16N170AHV | IGBT Transistors DISC IGBT BIMOSFET-HIGH VOLT | ||
| IXBT16N170 | Жаңа және түпнұсқа | ||
| IXBT16N170AHV | IGBT | ||
| IXBT16N170A | IGBT Transistors 1700V 16A |