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| PartNumber | IRLML0100TRPBF | IRLML0100TR | IRLML0100TRF |
| Description | MOSFET MOSFT 100V 1.6A 220mOhm 2.5nC Qg | ||
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1.6 A | - | - |
| Rds On Drain Source Resistance | 235 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 2.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.1 mm | - | - |
| Length | 2.9 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 1.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 5.7 s | - | - |
| Fall Time | 3.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.1 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 9 ns | - | - |
| Part # Aliases | SP001568612 | - | - |
| Unit Weight | 0.000282 oz | 0.050717 oz | - |
| Series | - | HEXFETR | - |
| Package Case | - | TO-236-3, SC-59, SOT-23-3 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | Micro3/SOT-23 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 1.3W | - |
| Drain to Source Voltage Vdss | - | 100V | - |
| Input Capacitance Ciss Vds | - | 290pF @ 25V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 1.6A (Ta) | - |
| Rds On Max Id Vgs | - | 220 mOhm @ 1.6A, 10V | - |
| Vgs th Max Id | - | 2.5V @ 25μA | - |
| Gate Charge Qg Vgs | - | 2.5nC @ 4.5V | - |
| Pd Power Dissipation | - | 1.3 W | - |
| Vgs Gate Source Voltage | - | 16 V | - |
| Id Continuous Drain Current | - | 1.6 A | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Rds On Drain Source Resistance | - | 235 mOhms | - |
| Qg Gate Charge | - | 2.5 nC | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
IRLML0100TRPBF | MOSFET MOSFT 100V 1.6A 220mOhm 2.5nC Qg | |
| IRLML0100TRPBF | MOSFET N-CH 100V 1.6A SOT-23-3 | ||
| IRLML0100TR | Жаңа және түпнұсқа | ||
| IRLML0100TRF | Жаңа және түпнұсқа | ||
| IRLML0100TRPBF-CUT TAPE | Жаңа және түпнұсқа |