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| PartNumber | IRLD110PBF | IRLD110 |
| Description | MOSFET N-CH 100V HEXFET MOSFET HEXDI | MOSFET RECOMMENDED ALT 844-IRLD110PBF |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | N |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | HVMDIP-4 | HVMDIP-4 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - |
| Id Continuous Drain Current | 1 A | - |
| Rds On Drain Source Resistance | 540 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - |
| Vgs Gate Source Voltage | 5 V | - |
| Qg Gate Charge | 6.1 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 1.3 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Tube | Tube |
| Transistor Type | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 1.3 S | - |
| Fall Time | 17 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 4.7 ns | - |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16 ns | - |
| Typical Turn On Delay Time | 9.3 ns | - |
| Height | - | 3.37 mm |
| Length | - | 6.29 mm |
| Width | - | 5 mm |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRLD110PBF | MOSFET N-CH 100V HEXFET MOSFET HEXDI | |
| IRLD110 | MOSFET RECOMMENDED ALT 844-IRLD110PBF | ||
Vishay |
IRLD110 | MOSFET N-CH 100V 1A 4-DIP | |
| IRLD110PBF | MOSFET N-CH 100V 1A 4-DIP | ||
| IRLD110PBF. | Transistor Polarity:N Channel, Continuous Drain Current Id:1A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.54ohm, Rds(on) Test Voltage Vgs:5V, Threshold Voltage Vgs:2V, Power Dissipat |