 |  | | |
| PartNumber | IRLD024 | IRLD02 | IRLD024-IRLD024 |
| Description | MOSFET RECOMMENDED ALT 844-IRLD024PBF | ||
| Manufacturer | Vishay | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | N | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | HVMDIP-4 | - | - |
| Packaging | Tube | Tube | - |
| Height | 3.37 mm | - | - |
| Length | 6.29 mm | - | - |
| Width | 5 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Package Case | - | HVMDIP-4 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single Dual Drain | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 1.3 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 110 ns | - |
| Rise Time | - | 110 ns | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Id Continuous Drain Current | - | 2.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Rds On Drain Source Resistance | - | 100 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 23 ns | - |
| Typical Turn On Delay Time | - | 11 ns | - |
| Channel Mode | - | Enhancement | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRLD024PBF | MOSFET N-CH 60V HEXFET MOSFET HEXDI | |
| IRLD024 | MOSFET RECOMMENDED ALT 844-IRLD024PBF | ||
| IRLD02 | Жаңа және түпнұсқа | ||
| IRLD024-IRLD024 | Жаңа және түпнұсқа | ||
Vishay |
IRLD024 | MOSFET N-CH 60V 2.5A 4-DIP | |
| IRLD024PBF | MOSFET N-CH 60V 2.5A 4-DIP |